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NCEP60T18 Datasheet
Datasheet specifications
| Datasheet's name | NCEP60T18 |
|---|---|
| File size | 82.401 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet NCEP60T18 |
Download Datasheet |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Wuxi NCE Power Semiconductor NCEP60T18
- Power Dissipation (Pd): 220W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 180A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@10V,20A
- Package: TO-220
- Manufacturer: Wuxi NCE Power Semiconductor